In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

A new technical paper titled “Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum ...

What are Organic Field-Effect Transistors? Organic field-effect transistors (OFETs) are a type of transistor that uses an organic semiconductor material as the active layer. Unlike conventional ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...

“Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...