Abstract: Planar indium arsenide (InAs) electron avalanche photodiodes (e-APDs) can provide significant avalanche gain with negligible excess noise. Reported InAs e-APDs are so far all top-side ...
Abstract: This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in ...