A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

NORTH READING, Mass.--(BUSINESS WIRE)--Teradyne, Inc. (NYSE:TER) introduces the ETS-88TH, the latest addition to the ETS-88 product line designed to test IGBT, MOSFET, and power module devices. The ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...