Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...
Carbon Nanotube Field-Effect Transistors (CNTFETs) represent a pivotal advancement in nanoelectronics, employing the extraordinary electrical properties of carbon nanotubes to achieve superior ...
A new technical paper titled “Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
Engineeringness on MSN
Transistors Explained: Switching and Signal Amplification
This video explains how transistors work as switches and amplifiers in electronic circuits. Transistors control the flow of ...
Researchers review scientific advances of electrolyte-gated carbon nanotube field-effect transistor biosensors, which are characterized by superior electronic properties and intrinsic signal ...
A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...
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