For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
The Nature Index 2024 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
In our previous post Low Power LDO Design Techniques for Really Small Profile Applications, Part 1, we reviewed LDO design tradeoffs using an NMOS pass transistor. This design approach is proven good ...
LONDON — The high electron mobilities of some III-V compounds is making them prime candidates for future NMOS channel materials, with an indium-based gallium-arsenide (InGaAs) likely to be the ...
Device scaling is getting much harder at each new process node. Even defining what it means is becoming a challenge. In the past, gate length and metal pitch went down and device density went up.
LTSpice is a tool that every electronics nerd should have at least a basic knowledge of. Those of us who work professionally in the analog and power worlds rely heavily on the validity of our ...
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