A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access memory (MRAM) using a new material called thulium iron garnet (TmIG) that ...

Low-Power Double Data Rate (LPDDR) emerged as a specialized high performance, low power memory for mobile phones. Since its first release in 2006, each new generation of LPDDR has delivered the ...

There’s never been more pressure on memory to meet the demands of new applications — everything from edge computing and the internet of things (IoT) to increasingly smarter phones and smart cars.

The rising cost of memory due to shortages is likely to persist into late 2027, driving higher device prices and lackluster configurations for PCs, tablets, and phones, IDC research manager Jitesh ...

UD’s Tingyi Gu receives NSF CAREER award to study materials that can create more reliable, less energy-intensive forms of computer memory To develop the types of high-speed, energy-efficient ...

(Nanowerk Spotlight) The human brain processes complex information while consuming merely the power of a dim light bulb. This remarkable efficiency stems from synapses, the connections between brain ...

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in ...